US Patent Issued to Parabellum Strategic Opportunities Fund on Jan. 20 for "Gate-all-around structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,506, issued on Jan. 20, was assigned to Parabellum Strategic Opportunities Fund LLC (Austin, Texas).

"Gate-all-around structure and methods of forming the same" was invented by Pei-Hsun Wang (Hsinchu, Taiwan), Chun-Hsiung Lin (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer including different semiconductor materials, and the fin comprises a channel region and ...