US Patent Issued to PANJIT INTERNATIONAL on July 7 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,449, issued on July 7, was assigned to PANJIT INTERNATIONAL INC. (Kaohsiung, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Che-Ming Lin (New Taipei, Taiwan), Jong Ho Park (Kaohsiung, Taiwan) and Kwang Yeon Jun (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes steps of: depositing an N-drift layer on a substrate, conducting an ion implant process on the N-drift layer to form a plurality of P-type pillars, depositing a N-type epitaxial layer on the P-type pillars, conducting an ion implant process...