US Patent Issued to PANJIT INTERNATIONAL on Dec. 2 for "Fabrication method of forming silicon carbide MOSFET" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,445, issued on Dec. 2, was assigned to PANJIT INTERNATIONAL INC. (Kaohsiung, Taiwan).

"Fabrication method of forming silicon carbide MOSFET" was invented by Seungchul Lee (San Jose, Calif.), Youngchul Choi (Santa Clara, Calif.) and Chaohsin Huang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method of forming a silicon carbide MOSFET is provided. The fabrication method includes the step of providing a semiconductor substrate. A P-well region is formed by implanting the semiconductor substrate through the P-well mask. A spacer is disposed on sidewall of the P-well mask and the P-well region is implanted to form an N-...