ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,512, issued on Dec. 2, was assigned to Panasonic Intellectual Property Management Co. Ltd. (Osaka, Japan).
"High voltage nitride semiconductor device" was invented by Hiroto Yamagiwa (Hyogo, Japan), Manabu Yanagihara (Osaka, Japan), Takahiro Sato (Toyama, Japan) and Masahiro Hikita (Hyogo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes third active regions that connect two finger-end portions of field effect transistors (FETs) spaced apart from each other, and includes, above the third active regions, portions of a third nitride semiconductor layer that includes P-type impurities."
The patent was filed on Dec. 2...