US Patent Issued to ORBRAY on Feb. 24 for "Substrate for epitaxially growing diamond crystal and method of manufacturing diamond crystal" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,978, issued on Feb. 24, was assigned to ORBRAY Co. LTD. (Tokyo).

"Substrate for epitaxially growing diamond crystal and method of manufacturing diamond crystal" was invented by Seongwoo Kim (Tokyo) and Koji Koyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle Phi of more than 0deg, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds ...