US Patent Issued to OOKUMA DIAMOND DEVICE on Oct. 6 for "Field effect transistor" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,736, issued on Oct. 6, was assigned to OOKUMA DIAMOND DEVICE Inc. (Sapporo, Japan).

"Field effect transistor" was invented by Junichi Kaneko (Sapporo, Japan), Hitoshi Koizumi (Sapporo, Japan), Takahiro Yamaguchi (Sapporo, Japan), Naohisa Hoshikawa (Sapporo, Japan), Hitoshi Umezawa (Ikeda, Japan), Hideaki Yamada (Ikeda, Japan) and Shinya Ohmagari (Tosu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor comprising: a non-doped diamond layer which has a hydrogen-terminated surface; first and second p+diamond layers which are formed on the non-doped diamond layer and sandwich a hydrogen-terminated region; a source electrode w...