US Patent Issued to Onto Innovation SDI on June 9 for "Wide bandgap semiconductor characterization based on capacitance characteristics acquired using corona surface charge neutralization by UV radiation pulses" (Florida Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,650,458, issued on June 9, was assigned to Onto Innovation SDI LLC (Tampa, Fla.).

"Wide bandgap semiconductor characterization based on capacitance characteristics acquired using corona surface charge neutralization by UV radiation pulses" was invented by Marshall D. Wilson (Tampa, Fla.), Jacek Lagowski (Tampa, Fla.), Ivan Shekerov (Tampa, Fla.), Bret Schrayer (Oldsmar, Fla.), Carlos Almeida (Odessa, Fla.), Liliana Gutierrez-Hernandez (Tampa, Fla.) and Adam Wincukiewicz (Tampa, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of characterizing a wide-bandgap semiconductor sample includes: depositing a corona charge on a surface of the sample;...