US Patent Issued to OMNIVISION TECHNOLOGIES on March 24 for "Backside deep trench isolation structure for leakage suppression" (California Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,302, issued on March 24, was assigned to OMNIVISION TECHNOLOGIES INC. (Santa Clara, Calif.).

"Backside deep trench isolation structure for leakage suppression" was invented by Chun-Yung Ai (San Jose, Calif.), Kazufumi Watanabe (Mountain View, Calif.) and Chih-Wei Hsiung (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pixel array substrate includes a semiconductor substrate including a pixel array, a first side, and a second side opposite the first side, a guard ring region in the semiconductor substrate, formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the first side,...