ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,218, issued on July 28, was assigned to Oji Holdings Corp. (Tokyo).

"Resist material and pattern forming method" was invented by Kimiko Hattori (Tokyo) and Kazuyo Morita (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optional...