ALEXANDRIA, Va., July 14 -- United States Patent no. 12,679,774, issued on July 14, was assigned to OCI Co. Ltd. (Seoul, South Korea).
"Method for manufacturing silicon nitride substrate" was invented by Seung Yeon Lee (Gyeonggi-do, South Korea), Seunggwan Lee (Gyeonggi-do, South Korea) and Eun Ok Chi (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to f...