US Patent Issued to NXP USA on Nov. 3 for "Transistors with dielectric spacers and methods of fabrication thereof" (Arizona Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,402, issued on Nov. 3, was assigned to NXP USA Inc. (Austin, Texas).

"Transistors with dielectric spacers and methods of fabrication thereof" was invented by Congyong Zhu (Gilbert, Ariz.), Philippe Renaud (Chandler, Ariz.), Darrell Glenn Hill (Chandler, Ariz.), Gregory David Hale (Chandler, Ariz.) and Colby Greg Rampley (Phoenix).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device and method of fabrication are provided, where the transistor device may include a semiconductor substrate, a first dielectric layer disposed on a surface of the semiconductor substrate, a second dielectric layer disposed directly on the first dielectric layer,...