US Patent Issued to NXP USA on June 23 for "Protection structure for an enhancement-mode FET of a circuit and corresponding method" (Arizona Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,594, issued on June 23, was assigned to NXP USA Inc. (Austin, Texas).

"Protection structure for an enhancement-mode FET of a circuit and corresponding method" was invented by John Pigott (Phoenix), Vishnu Khemka (Chandler, Ariz.) and Tanuj Saxena (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a circuit comprising a self-conducting transistor referred to as power transistor, a further transistor referred to as control transistor, a further transistor referred to as first protection transistor, and a string referred to as a Zener string, which comprises at least one Zener diode, wherein the power trans...