ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,847, issued on July 14, was assigned to NXP USA INC. (Austin, Texas).
"Semiconductor device with a recessed field plate and method of fabrication therefor" was invented by Bernhard Grote (Phoenix), Jie Hu (Chandler, Ariz.), Philippe Renaud (Chandler, Ariz.), Congyong Zhu (Gilbert, Ariz.) and Bruce McRae Green (Gilbert, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate with an upper surface and a channel, source and drain electrodes over the upper surface of the semiconductor substrate, a passivation layer between the source and drain electrodes, a gate electrode between the source and drai...