US Patent Issued to NXP USA on Aug. 11 for "Sensing within an embedded dynamic random access memories (DRAMs) having reference cells" (Texas Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,704,962, issued on Aug. 11, was assigned to NXP USA Inc. (Austin, Texas).

"Sensing within an embedded dynamic random access memories (DRAMs) having reference cells" was invented by Anirban Roy (Austin, Texas) and Nihaar N. Mahatme (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random access memory (DRAM) array has a first portion configured as a data array and a second portion configured as a reference array. The DRAM array includes read bit lines which include a first plurality of read bit lines in the data array and a second plurality of read bit lines in the reference array. Read circuitry includes a plurality of sensing circ...