US Patent Issued to NXP USA on April 7 for "Transistor with source manifold in non-active die region" (Arizona Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,599,008, issued on April 7, was assigned to NXP USA INC. (Austin, Texas).

"Transistor with source manifold in non-active die region" was invented by Humayun Kabir (Gilbert, Ariz.) and Ibrahim Khalil (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a semiconductor die with an active region and one or more non-active regions that do not overlap or overlie the active region. The transistor further includes a group of multiple transistor fingers in the active region. One or more source vias are located adjacent to sides of the group of transistor fingers. One or more source manifolds are located in the non-active region(s...