US Patent Issued to NXP on Sept. 29 for "FinFET with local heatsinking and method of manufacturing the same" (Texas, California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,751,286, issued on Sept. 29, was assigned to NXP B.V. (Eindhoven, Netherlands).

"FinFET with local heatsinking and method of manufacturing the same" was invented by Viet Thanh Dinh (Austin, Texas), Asanga H Perera (West Lake Hills, Texas) and Sai-Wang Tam (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "One example discloses a finFet semiconductor device and corresponding manufacturing method is disclosed, the device comprising: a substrate having therein a body-region, a plurality of elongate fins at a first major surface and within the body-region; an oxide layer on the first major surface and partially surrounding a lower portion of...