US Patent Issued to NXP on March 24 for "Semiconductor device having wired under bump structure and method therefor" (Taiwanese, Malaysian Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,538, issued on March 24, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device having wired under bump structure and method therefor" was invented by Kuan-Hsiang Mao (Kaohsiung, Taiwan), Shu-Han Yang (Kaohsiung, Taiwan), Pey Fang Hiew (Kajang, Malaysia) and Wen Hung Huang (Kaosiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is f...