ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,631, issued on Feb. 24, was assigned to NXP B.V. (Eindhoven, Netherlands).
"Gate driver for a low dropout voltage regulator" was invented by Jean-Robert Tourret (Cormelles le Royal, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A low drop-out (LDO) regulator includes an NMOS transistor having one of a source and drain terminal configured to be coupled to a voltage supply and the other of the source and drain terminal coupled to the low drop out voltage regulator output. A gate driver for the LDO regulator includes a boost converter having a boost converter input configured to be coupled to a boost converter reference voltage, a boost convert...