US Patent Issued to Nuvoton Technology Corporation Japan on Nov. 3 for "Nitride-based semiconductor light-emitting element" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,503, issued on Nov. 3, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan).

"Nitride-based semiconductor light-emitting element" was invented by Toru Takayama (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor light-emitting element includes a semiconductor stack body that includes: an N-type first cladding layer; an N-side guide layer; an active layer that includes a well layer and a barrier layer; a P-side guide layer; and a P-type cladding layer. Band gap energy of the P-side guide layer monotonically increases with an increase in distance from the active layer. An average of the band gap en...