ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,721, issued on Dec. 16, was assigned to NTT Inc. (Tokyo).
"Semiconductor device" was invented by Yoko Ono (Musashino, Japan), Yuya Uzumaki (Musashino, Japan), Sayumi Sato (Musashino, Japan) and Takeshi Komatsu (Musashino, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer, which is disposed on the surface of a substrate and causing an oxidation reaction and a reduction reaction when irradiated with light, an oxidation catalyst layer, which is disposed on part of the surface of the semiconductor layer, forms along with the semiconductor layer a Schottky junction, and oxidizes an oxidation target...