US Patent Issued to Northwestern University on Aug. 4 for "Magnetic memory devices having a low switching voltage" (Illinois Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,925, issued on Aug. 4, was assigned to Northwestern University (Evanston, Ill.).

"Magnetic memory devices having a low switching voltage" was invented by Pedram Khalili Amiri (Wilmette, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device includes a bottom electrode, a bottom CoFeB fixed layer disposed above and in electrical communication with the bottom electrode, a MgO layer disposed above the bottom CoFeB fixed layer, a top CoFeB free layer disposed above the MgO layer, a Mo capping layer disposed above the top CoFeB free layer, and a top electrode disposed above...