ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,414, issued on Aug. 25, was assigned to Northrop Grumman Systems Corp. (Falls Church, Va.).
"Low noise amplifier with post distortion circuit" was invented by Manouchehr Ghanevati (Redondo Beach, Calif.), Kevin M. Leong (Redondo Beach, Calif.) and Mansoor K. Siddiqui (Redondo Beach, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary RF amplifier circuit has a LNA with its output coupling RF signals to a load. A post distortion (PD) circuit having a semiconductor device with a control gate biased to cause the semiconductor device to operate in a nonlinear region at or near pinch-off that is coupled to the output of the LNA. The PD cir...