US Patent Issued to North-China Integrated Circuit on Sept. 9 for "Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit and amplifier" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,413,191, issued on Sept. 9, was assigned to North-China Integrated Circuit Co. Ltd. (Hebei, China).

"Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit and amplifier" was invented by Pengbo Du (Hebei, China), Yu Wang (Hebei, China), Zhaotan Cui (Hebei, China), Xuelong Jiao (Hebei, China), Zhipeng Ren (Hebei, China) and Hanbin Qu (Hebei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit and an amplifier, and belongs to the field of MMIC amplifiers. The circuit includes...