ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,743,019, issued on Sept. 22, was assigned to NISSAN CHEMICAL Corp. (Tokyo).

"Resist underlayer film-forming composition containing terminal-blocked reaction product" was invented by Tomotada Hirohara (Toyama, Japan), Shou Shimizu (Toyama, Japan) and Mamoru Tamura (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A composition for forming a resist underlayer film and a method for producing a resist pattern, the method using the composition for forming a resist underlayer film; and a method for producing a semiconductor device. A resist underlayer film-forming composition which contains an organic solvent and a polymer that has an end blocked...