ALEXANDRIA, Va., July 15 -- United States Patent no. 12,663,719, issued on June 23, was assigned to NISSAN CHEMICAL Corp. (Tokyo).
"Resist underlayer film-forming composition" was invented by Hiroto Ogata (Toyama, Japan), Tomotada Hirohara (Toyama, Japan), Hirokazu Nishimaki (Toyama, Japan) and Makoto Nakajima (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resist underlayer film forming composition wherein a flat film forms exhibiting high etching resistance, a good dry etching rate ratio and optical constant, has good coverage, and a small difference in film thickness after embedding. Also included are a resist underlayer film using the resist underlayer film forming composition; and a meth...