ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,206, issued on July 14, was assigned to Nippon Micrometal Corp. (Saitama, Japan) and NIPPON STEEL Chemical & Material Co. Ltd. (Tokyo).
"AI bonding wire for semiconductor devices" was invented by Yuya Suto (Tokyo), Tomohiro Uno (Tokyo), Tetsuya Oyamada (Tokyo), Daizo Oda (Saitama, Japan), Motoki Eto (Saitama, Japan) and Yuto Kurihara (Saitama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices...