ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,610, issued on April 21, was assigned to NIKO SEMICONDUCTOR Co. LTD. (New Taipei City, Taiwan) and SUPER GROUP SEMICONDUCTOR Co. LTD. (Hsinchu County, Taiwan).

"Power device and method for manufacturing the same" was invented by Sung-Nien Tang (Hsinchu County, Taiwan), Ho-Tai Chen (Hsinchu County, Taiwan) and Hsiu-Wen Hsu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power device and a method for manufacturing the power device are provided. The power device includes an electrical substrate, an epitaxial layer, a well region, a plurality of doping regions, a plurality of trenches, a first oxidation layer, a second oxidatio...