US Patent Issued to Nikkiso on July 14 for "Method for manufacturing nitride semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,900, issued on July 14, was assigned to Nikkiso Co. Ltd. (Tokyo).

"Method for manufacturing nitride semiconductor light-emitting element" was invented by Kazufumi Takao (Ishikawa, Japan), Yusuke Matsukura (Ishikawa, Japan) and Cyril Pernot (Ishikawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Manufacturing a nitride semiconductor light-emitting device includes a depositing an n-type cladding layer and an active layer with a multi-quantum well structure having a plurality of well layers on a substrate in a chamber. In depositing the active layer, a silicon source is not supplied into the chamber. The method includes supplying the silicon so...