ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,507, issued on Dec. 23, was assigned to Nikkiso Co. Ltd. (Tokyo).
"Nitride semiconductor light-emitting element" was invented by Kazufumi Takao (Ishikawa, Japan) and Cyril Pernot (Ishikawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. Pits are formed in the active layer and the electron blocking layer. A density of the pits on an upper su...