US Patent Issued to NIKKISO on Aug. 4 for "Method of manufacturing semiconductor light-emitting element" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,822, issued on Aug. 4, was assigned to NIKKISO Co. LTD. (Tokyo).

"Method of manufacturing semiconductor light-emitting element" was invented by Noritaka Niwa (Ishikawa, Japan) and Tetsuhiko Inazu (Ishikawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor light-emitting element includes: forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of...