US Patent Issued to NICHIA on Nov. 3 for "Semiconductor element and manufacturing method for semiconductor element" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,501, issued on Nov. 3, was assigned to NICHIA Corp. (Anan, Japan).

"Semiconductor element and manufacturing method for semiconductor element" was invented by Takuya Kadowaki (Yokohama, Japan) and Tadashi Kawazoe (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor element includes: providing a semiconductor stack including: a silicon substrate containing a first impurity of a first conductivity type that is one of p-type and n-type, at a first concentration, and a silicon semiconductor layer provided on the silicon substrate, the silicon semiconductor layer including: a first silicon semiconductor la...