ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,507, issued on July 7, was assigned to NICHIA Corp. (Anan, Japan).
"Light emitting element and method of manufacturing light emitting element" was invented by Yasunobu Hosokawa (Tokushima, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting element includes a first conductivity type semiconductor layer that is a nitride semiconductor layer containing Al and Ga. The first conductivity type semiconductor layer includes a first layer and a second layer. An Al percentage composition of the first layer is lower than an Al percentage composition of the second layer. The first conductivity type semiconductor layer has a first region and a ...