US Patent Issued to NICHIA on Dec. 16 for "Light-emitting element including p-side layer with first and second layers having different p-type impurity concentrations and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,746, issued on Dec. 16, was assigned to NICHIA Corp. (Anan, Japan).

"Light-emitting element including p-side layer with first and second layers having different p-type impurity concentrations and method for manufacturing same" was invented by Hiroki Abe (Komatsushima, Japan) and Ryota Funakoshi (Tokushima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting element includes: a first light-emitting portion includes, in order upward from a lower side, a first n-side layer, a first active layer, and a first p-side layer disposed, each made of a nitride semiconductor; an intermediate layer disposed over the first light-emitting portion...