US Patent Issued to NICHIA on Aug. 25 for "Nitride semiconductor laser element" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,233, issued on Aug. 25, was assigned to NICHIA Corp. (Anan, Japan).

"Nitride semiconductor laser element" was invented by Tomonori Morizumi (Anan, Japan) and Teruyuki Morito (Anan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor laser element includes a nitride semiconductor stack body and a protective film. The nitride semiconductor stack body includes first and second nitride semiconductor layers and an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer. The nitride semiconductor stack body defines a light-emission-side end face intersecting a face of the acti...