US Patent Issued to NGK INSULATORS on May 26 for "AlN single crystal substrate" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,788, issued on May 26, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"AlN single crystal substrate" was invented by Hiroharu Kobayashi (Kasugai, Japan), Hirohisa Ogawa (Kitanagoya, Japan) and Morimichi Watanabe (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an AlN single crystal substrate having a three-layer structure composed of one AlN single crystal as a whole and is classifiable into the first layer, the second layer, and the third layer in this order in the thickness direction in terms of defect density, wherein the second layer has a defect density of 10 times or more the defect density of each of the first la...