US Patent Issued to NGK INSULATORS on Feb. 24 for "Free-standing substrate for epitaxial crystal growth, and functional element" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,023, issued on Feb. 24, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Free-standing substrate for epitaxial crystal growth, and functional element" was invented by Masahiro Sakai (Nagoya, Japan) and Takashi Yoshino (Ama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A free-standing substrate, for growing epitaxial crystal composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof, includes a nitrogen polar surface and group 13 element polar surface. The nitrogen polar surface is warped in a convex shape, and a chamfer part is provided in an outer peripheral part of...