US Patent Issued to NGK INSULATORS on Feb. 24 for "Composite substrate, method for producing composite substrate, and method for producing gallium oxide crystal film" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,855, issued on Feb. 24, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Composite substrate, method for producing composite substrate, and method for producing gallium oxide crystal film" was invented by Jun Yoshikawa (Nagoya, Japan), Miho Maeda (Nagoya, Japan) and Hiroyuki Shibata (Okazaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A composite substrate includes: a base substrate and an Alpha-Ga2O3 crystal film that is provided on the base substrate, has a thickness of 10 micro metre or more, and has at least one alkali metal element content of 1.2x1015 atoms/cm3 or more and 1.0x1018 atoms/cm3 or less."

The patent was filed on Sep...