US Patent Issued to NGK INSULATORS on Feb. 10 for "Group III element nitride substrate and production method for group III element nitride substrate" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,546,031, issued on Feb. 10, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Group III element nitride substrate and production method for group III element nitride substrate" was invented by Katsuhiro Imai (Nagoya, Japan), Tomohiko Sugiyama (Nagoya, Japan) and Kentaro Nonaka (Gifu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Group-III element nitride substrate includes a first main surface and a second main surface facing each other, wherein, in the first main surface, crystallinity of a first part positioned on a central portion thereof is higher than crystallinity of a second part positioned outside the first part."

The patent was fi...