US Patent Issued to NGK INSULATORS on Feb. 10 for "Group-III element nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,490, issued on Feb. 10, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Group-III element nitride semiconductor substrate" was invented by Kentaro Nonaka (Gifu, Japan), Takayuki Hirao (Toyota, Japan) and Katsuhiro Imai (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a large-diameter Group-III element nitride semiconductor substrate including a first surface and a second surface, in which, despite its large diameter, variations in quality in the first surface are suppressed. A Group-III element nitride semiconductor includes: a first surface; and a second surface, wherein the Group-III element nitride semiconduct...