ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,828, issued on Aug. 25, was assigned to NGK INSULATORS Ltd. (Nagoya-City, Japan).

"Semiconductor film" was invented by Morimichi Watanabe (Nagoya-City, Japan) and Hiroshi Fukui (Obu-City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor film having a corundum-type crystal structure composed of Alpha-Ga2O3 or an Alpha-Ga2O3 solid solution, and an impurity concentration and/or a heterogeneous phase amount differ between a front surface and a rear surface of the semiconductor film."

The patent was filed on Sept. 7, 2021, under Application No. 17/467,943.

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