US Patent Issued to Nexperia Technology (Shanghai), Nexperia on July 21 for "Package structure for power semiconductor devices with improved parasitic parameters" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,495, issued on July 21, was assigned to Nexperia Technology (Shanghai) Ltd. (Shanghai) and Nexperia B.V. (Nijmegen, Netherlands).

"Package structure for power semiconductor devices with improved parasitic parameters" was invented by Wei Gong (Shanghai), Chunlin Zhu (Shanghai) and Ke Jiang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A package structure for a power semiconductor device is provided, including: a substrate; two or more semiconductor dies on the substrate, each of the semiconductor dies includes a first power switching pad, a second power switching pad and a gate; a gate control conductive trace, a first power switching cont...