US Patent Issued to Nexperia Technology (Shanghai), Nexperia on July 14 for "Semiconductor device including trench gate and source open end and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,811, issued on July 14, was assigned to Nexperia Technology (Shanghai) Ltd. (Shanghai) and Nexperia B.V. (NiJmegen, Netherlands).

"Semiconductor device including trench gate and source open end and manufacturing method thereof" was invented by Xukun Zhang (Shanghai), Chunlin Zhu (Shanghai), Ke Jiang (Shanghai), Huiling Zuo (Shanghai), Junli Xiang (Shanghai), Jinshan Shi (Shanghai) and Yuan Fang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof is provided. The device includes a semiconductor layer having a first and second surface opposing each other; a trench gate in the semiconductor...