US Patent Issued to Nexperia on April 21 for "Electrostatic discharge, ESD, protection semiconductor device for providing ESD protection between a first and a second terminal of another semiconductor device, as well as a corresponding metal oxide semiconductor, MOS, field effect transistor, FET, and a related method" (German Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,623, issued on April 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Electrostatic discharge, ESD, protection semiconductor device for providing ESD protection between a first and a second terminal of another semiconductor device, as well as a corresponding metal oxide semiconductor, MOS, field effect transistor, FET, and a related method" was invented by Chinmoy Khaund (Hamburg, Germany), Manoj Kumar (Hamburg, Germany) and Kilian Ong (Hamburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to an Electrostatic Discharge (ESD) protection semiconductor device for providing ESD protection between a first and ...