US Patent Issued to Nexperia, Nexperia Technology (Shanghai) on Sept. 29 for "Multi-level di/di control of a power semiconductor device" (British, Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,750,049, issued on Sept. 29, was assigned to Nexperia B.V. (Nijmegen, Netherlands) and Nexperia Technology (Shanghai) Ltd. (Shanghai).

"Multi-level di/di control of a power semiconductor device" was invented by Shiwu Zhu (Manchester, Great Britain), Chunlin Zhu (Manchester, Great Britain) and Ke Jiang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device has a power semiconductor die forming a power switch with an input pad, an output pad, and a control pad; a collector power terminal coupled to the input pad of the power switch; an auxiliary gate terminal coupled to the control pad of the power switch; an emitter power ...