US Patent Issued to NEXCHIP SEMICONDUCTOR on May 19 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,486, issued on May 19, was assigned to NEXCHIP SEMICONDUCTOR Corp. (Hefei, China).

"Semiconductor device and manufacturing method thereof" was invented by Wei Pang Chen (Taiwan, China), Chih-Nan Wu (Taiwan, China) and Chi-Cherng Jeng (Taiwan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method is provided. The semiconductor device includes a substrate, a shallow trench isolation structure, a dielectric layer, a gate, a source and a drain. The substrate includes a first region and a second region. The shallow trench isolation structure is arranged on the first region and the second region, and the sha...