US Patent Issued to NEW V-KEY TECHNOLOGY on Aug. 4 for "Anti-noise electrode connector and method for manufacturing the same" (Japanese, Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,701, issued on Aug. 4, was assigned to NEW V-KEY TECHNOLOGY Co. LTD. (New Taipei City, Taiwan).

"Anti-noise electrode connector and method for manufacturing the same" was invented by Kohei Ono (Tokyo) and Cheng-Change Hsieh (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An anti-noise electrode connector and a method for manufacturing the same are provided. The anti-noise electrode connector includes an electrode snap socket, a wire, an inner insulating layer, an anti-noise layer, and an outer insulating layer. The wire includes a conductive core wire, an insulator, a metal shielding layer disposed at an outer periphery of the...