US Patent Issued to Navitas Semiconductor on Sept. 1 for "Gallium nitride regulator circuits and methods of operating the same" (Chinese, American Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,724,439, issued on Sept. 1, was assigned to Navitas Semiconductor Ltd. (Dublin).

"Gallium nitride regulator circuits and methods of operating the same" was invented by Songming Zhou (Shanghai) and Tao Liu (San Marino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gallium nitride reference voltage generation circuits. In one aspect, the circuit includes a first gallium nitride (GaN)-based transistor having a first gate terminal, a first source terminal and a first drain terminal, a second GaN-based transistor having a second gate terminal, a second source terminal and a second drain terminal, the second gate terminal coupled to the first drain te...