US Patent Issued to National Yang Ming Chiao Tung University on Oct. 27 for "Method for the fabrication of p-type Ga 2 O 3 by phosphorus ion implantation" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,774,535, issued on Oct. 27, was assigned to National Yang Ming Chiao Tung University (Hsinchu City, Taiwan).

"Method for the fabrication of p-type Ga 2 O 3 by phosphorus ion implantation" was invented by Ray-Hua Horng (Hsinchu City, Taiwan) and Xin-Ying Tsai (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for the fabrication of p-type Ga2O3 by phosphorus ion implantation, wherein the method comprises: growing gallium oxide epilayer having a predetermined thickness on a substrate by controlling a growth temperature and a growth pressure; and implanting phosphorus ions on the gallium oxide epilayer by providing the phosphorus...