US Patent Issued to National Yang Ming Chiao Tung University on Feb. 17 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,315, issued on Feb. 17, was assigned to National Yang Ming Chiao Tung University (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Edward Yi Chang (Hsinchu County, Taiwan), You-Chen Weng (New Taipei, Taiwan) and Min-Lu Kao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a channel layer, a first barrier layer, a source/drain contact, and a gate layer. The channel layer is on the substrate. The first barrier layer is on the channel layer and the thickness of the first barrier layer is less than 6 nm. The source/drain contact is on the first barrier la...