US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Dec. 23 for "Gate fabrication method of an U-metal-oxide-semiconductor field-effect transistor and trench gate structure formed thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,436, issued on Dec. 23, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu, Taiwan).

"Gate fabrication method of an U-metal-oxide-semiconductor field-effect transistor and trench gate structure formed thereof" was invented by Bing-Yue Tsui (Hsinchu, Taiwan) and Li-Tien Hsueh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate fabrication method of an UMOSFET and a trench gate structure formed thereof are provided, comprising providing a transistor structure and a lithography process is employed to define a trench region. A gate oxide layer is deposited along the trench and two polysilicon sidewalls having a spacing t...